[IEEE IEEE InternationalElectron Devices Meeting, 2005....

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference

Yua, D.S., China, A., Wu, C.H., Li, M.-F., Zhu, C., Wang, S.J., Yoo, W.J., Hung, B.F., McAlister, S.P.

How much do you like this book?

What’s the quality of the file?

Download the book for quality assessment

What’s the quality of the downloaded files?

Year:

2005

Language:

english

DOI:

10.1109/iedm.2005.1609430

File:

PDF, 429 KB

english, 2005

Conversion to is in progress

Conversion to is failed