[IEEE 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - singapore (2008.07.7-2008.07.11)] 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - A novel dual-BBHH erasing scheme to improve endurance and retention performances for localized charge trapping memories
Shi, Guangjian, Pan, Liyang, Ritzenthaler, Romain, Sun, Lei, Zhigang Zhang,, Xu, JunYear:
2008
Language:
english
DOI:
10.1109/ipfa.2008.4588193
File:
PDF, 225 KB
english, 2008