Comparison of Si/High- $\kappa$ and $\hbox{Si}/ \hbox{SiO}_{2}$ Channel Properties in SOI MOSFETs
Loan Pham-Nguyen,, Fenouillet-Beranger, C., Vandooren, A., Skotnicki, T., Ghibaudo, G., Cristoloveanu, S.Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2027141
Date:
October, 2009
File:
PDF, 345 KB
english, 2009