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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - 4500 V IEGTs having switching characteristics superior to GTO
Kitagawa, M., Nakagawa, A., Matsushita, K., Hasegawa, S., Inoue, T., Yahata, A., Takenaka, H.Year:
1995
Language:
english
DOI:
10.1109/ispsd.1995.515086
File:
PDF, 404 KB
english, 1995