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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - 25 nm Planar Bulk SONOS-type Memory with Double Tunnel Junction
Ohba, Ryuji, Mitani, Yuichiro, Sugiyama, Naoharu, Fujita, ShinobuYear:
2006
Language:
english
DOI:
10.1109/iedm.2006.346945
File:
PDF, 345 KB
english, 2006