[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Theoretical approach and precise description of PBTI in high-k gate dielectrics based on electron trap in pre-existing and stress-induced defects
Shimokawa, Junji, Sato, Motoyuki, Suzuki, Chikashi, Nakamura, Mitsutoshi, Ohji, YuzuruYear:
2009
Language:
english
DOI:
10.1109/irps.2009.5173393
File:
PDF, 493 KB
english, 2009