[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Electrical and physical characteristics of the high-K Tb2O3 (terbium) dielectric deposited on the polycrystalline silicon

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