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[IEEE 2006 IEEE Compound Semiconductor Integrated Circuit Symposium - San Antonio, TX (2006.11.12-2006.11.15)] 2006 IEEE Compound Semiconductor Integrated Circuit Symposium - 60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz fT, BVCEO = 2.5V, and BVCBO = 2.7V
Griffith, Z., Lind, E., Rodwell, M.J.W., Xiao-Ming Fang,, Loubychev, D., Ying Wu,, Fastenau, J.M., Liu, A.W.K.Year:
2006
Language:
english
DOI:
10.1109/csics.2006.319953
File:
PDF, 3.51 MB
english, 2006