[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - On the physical properties of In2O3 films prepared by atomic layer deposition using tri-methyl-indium and nitrous oxide
Wei-Hsu Chi,, Kuo-Yi Yen,, Shao-Cian Li,, Jyh-Rong Gong,, Cuo-Yo Nieh,, Shih-Chang Liang,Year:
2010
Language:
english
DOI:
10.1109/inec.2010.5425204
File:
PDF, 312 KB
english, 2010