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[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - The influence of oxidation-induced stress on the generation current and its impact on scaled device performance
Smeys, P., Griffin, P.B., Rek, Z.U., De Wolf, I., Saraswat, K.C.Year:
1996
Language:
english
DOI:
10.1109/iedm.1996.554079
File:
PDF, 423 KB
english, 1996