[IEEE IEEE InternationalElectron Devices Meeting, 2005....

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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Dual stress capping layer enhancement study for hybrid orientation finFET CMOS technology

Kyoungsub Shin,, Chi On Chui,, Tsu-Jae King,
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Year:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609528
File:
PDF, 329 KB
english, 2005
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