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[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Memory characteristics of multilayer structures with lanthanum-aluminate charge trap by fowler-nordheim tunneling
Seung-Yong Cha,, Hyo-June Kim,, Doo-Jin Choi,Year:
2010
Language:
english
DOI:
10.1109/inec.2010.5424946
File:
PDF, 173 KB
english, 2010