[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - A high current gain Si HBT with a hydrogenated micro-crystalline Si emitter
Fujioka, H., Ri, S., Takasaki, K., Fujino, K., Yasutaka Ban,Year:
1987
Language:
english
DOI:
10.1109/iedm.1987.191384
File:
PDF, 278 KB
english, 1987