[IEEE 2013 International Conference on Simulation of...

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[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Impact of back-end-of-line on thermal impedance in SiGe HBTs

Sahoo, A. K., Fregonese, S., Weis, M., Maneux, C., Malbert, N., Zimmer, T.
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Year:
2013
Language:
english
DOI:
10.1109/sispad.2013.6650606
File:
PDF, 1.23 MB
english, 2013
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