[IEEE 2007 Proceedings 57th Electronic Components and Technology Conference - Sparks, NV, USA (2007.05.29-2007.06.1)] 2007 Proceedings 57th Electronic Components and Technology Conference - Via First Technology Development Based on High Aspect Ratio Trenches Filled with Doped Polysilicon
Henry, D., Baillin, X., Lapras, V., Vaudaine, MH., Quemper, JM., Sillon, N., Dunne, B., Hernandez, C., Vigier-Blanc, E.Year:
2007
Language:
english
DOI:
10.1109/ectc.2007.373894
File:
PDF, 4.11 MB
english, 2007