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[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Time dependent 3-D statistical KMC simulation of high-k degradation including trap generation and electron capture/emission dynamic
Wang, Yijiao, Huang, Peng, Liu, Xiaoyan, Du, Gang, Kang, JinfengYear:
2014
Language:
english
DOI:
10.1109/sispad.2014.6931569
File:
PDF, 3.05 MB
english, 2014