[IEEE IEEE InternationalElectron Devices Meeting, 2005....

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[IEEE IEEE InternationalElectron...

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Novel transition layer engineered si nanocrystal flash memory with NHSOS structure featuring large V/sub th/ window and fast P/E speed.

Kyong-Hee Joo,, Xiofeng Wang,, Jeong Hee Han,, Seung-Hyun Lim,, Seung-Jae Baik,, Yong-Won Cha,, Jin Wook Lee,, In-Seok Yeo,, Young-Kwan Cha,, In Kyeong Yoo,, U-In Chung,, Joo Tae Moon,, By

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Year:

2005

Language:

english

DOI:

10.1109/iedm.2005.1609494

File:

PDF, 700 KB

english, 2005

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