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[IRE 1979 International Electron Devices Meeting - ()] 1979 International Electron Devices Meeting - A new silicon heterojunction transistor using the doped SIPOS

Oh-uchi, N., Hayashi, H., Yamoto, H., Matsushita, T.
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Year:
1979
Language:
english
DOI:
10.1109/iedm.1979.189673
File:
PDF, 260 KB
english, 1979
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