[IRE 1979 International Electron Devices Meeting - ()] 1979 International Electron Devices Meeting - A new silicon heterojunction transistor using the doped SIPOS
Oh-uchi, N., Hayashi, H., Yamoto, H., Matsushita, T.Year:
1979
Language:
english
DOI:
10.1109/iedm.1979.189673
File:
PDF, 260 KB
english, 1979