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[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay
Meister, T.F., Schafer, H., Franosch, M., Molzer, W., Aufinger, K., Scheler, U., Walz, C., Stolz, H., Boguth, S., Bock, J.Year:
1995
Language:
english
DOI:
10.1109/iedm.1995.499324
File:
PDF, 348 KB
english, 1995