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[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - 3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements
Aldegunde, Manuel, Garcia-Loureiro, Antonio J., Martinez, Antonio, Kalna, KarolYear:
2008
Language:
english
DOI:
10.1109/sispad.2008.4648260
File:
PDF, 3.31 MB
english, 2008