[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Stress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths
Singh, D.V., Sleight, J.W., Hergenrother, J.M., Ren, Z., Jenkins, K.A., Dokumaci, O., Black, L., Chang, J.B., Nakayama, H., Chidambarrao, D., Venigalla, R., Pan, J., Natzle, W., Tessier, B.L., Nomura,Year:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609392
File:
PDF, 877 KB
english, 2005