[IEEE 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, Jiangsu, China (2009.07.6-2009.07.10)] 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Source-side engineering to increase holding voltage of LDMOS in a 0.5-m 16-V BCD technology to avoid latch-up failure

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