[IEEE 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, China (2013.07.15-2013.07.19)] Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Analysis of dynamic retention characteristics of NWL scheme in high density DRAM
Myungjae Lee,, Hyungshin Kwon,, Jonghyoung Lim,, Hongsun Hwang,, SeongJin Jang,, Yonghan Roh,Year:
2013
DOI:
10.1109/ipfa.2013.6599242
File:
PDF, 187 KB
2013