[IEEE Device Research Conference - Santa Barbara, CA, USA (24-26 June 2002)] 60th DRC. Conference Digest Device Research Conference - Proposal of N-channel heterostructure dynamic threshold-voltage MOSFET (HDTMOS) with P-type doped SiGe body
Kawashima, T., Takagi, T., Hara, Y., Kanzawa, Y., Inoue, A., Sorada, H., Nozawa, K., Asai, A., Ohnishi, T., Kubo, M.Year:
2002
Language:
english
DOI:
10.1109/drc.2002.1029502
File:
PDF, 123 KB
english, 2002