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[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Effect of interface properties on the characteristics of InP/GaInAs high electron mobility transistors
Kohl, A., Kusters, A.M., Muller, R., Brittner, S., Heime, K., Finders, J., Keuter, M., Geurts, J.Year:
1993
Language:
english
DOI:
10.1109/iciprm.1993.380599
File:
PDF, 362 KB
english, 1993