480-GHz $f_{\max}$ in InP/GaAsSb/InP DHBT With New Base Isolation $\mu$-Airbridge Design
Zaknoune, M., Mairiaux, E., Roelens, Y., Waldhoff, N., Rouchy, U., Frijlink, P., Rocchi, M., Maher, H.Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2210187
Date:
October, 2012
File:
PDF, 220 KB
english, 2012