![](/img/cover-not-exists.png)
[IEEE 2011 Materials for Advanced Metallization (MAM) - Dresden, Germany (2011.05.8-2011.05.12)] 2011 IEEE International Interconnect Technology Conference - Electrical performances of low resistive W buried gate using B2H6-reduced W nucleation layer technology for 30nm-based DRAM devices
Kim, Choon-Hwan, Rho, Il-Cheol, Eun, Byung-Soo, Kim, Hyun-Phill, Jin, Sung-gon, Kang, Hyo-SangYear:
2011
Language:
english
DOI:
10.1109/iitc.2011.5940358
File:
PDF, 1.60 MB
english, 2011