[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Analysis of the Biasing Conditions and Latching Operation for Si/SiGe Resonant Interband Tunnel Diode Based Tunneling SRAM
Sudirgo, S., Pawlik, D.J., Rommel, S.L., Kurinec, S.K., Thompson, P.E., Berger, P.R.Year:
2005
Language:
english
DOI:
10.1109/isdrs.2005.1596122
File:
PDF, 267 KB
english, 2005