[IEEE 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, Jiangsu, China (2009.07.6-2009.07.10)] 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Comparison of breakdown mechanism of HfO2 and HfSiOx high-k gate dielectrics with N2 RTA treatment on TDDB constant voltage stress

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