[IEEE 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Atlanta, GA, USA (2011.10.9-2011.10.11)] 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power
Dabag, Hayg-Taniel, Kim, Joohwa, Larson, Lawrence E., Buckwalter, James F., Asbeck, Peter M.Year:
2011
Language:
english
DOI:
10.1109/bctm.2011.6082742
File:
PDF, 667 KB
english, 2011