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[IEEE 2011 IEEE 9th International Conference on ASIC (ASICON 2011) - Xiamen, China (2011.10.25-2011.10.28)] 2011 9th IEEE International Conference on ASIC - Effects of unintended dopants on I–V characteristics of the double-gate MOSFETs, a simulation study
Peicheng Li,, Guanghui Mei,, Guangxi Hu,, Ran Liu,, Tingao Tang,Year:
2011
Language:
english
DOI:
10.1109/asicon.2011.6157310
File:
PDF, 658 KB
english, 2011