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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - A novel BE-SONOS NAND Flash using non-cut trapping layer with superb reliability
Chih-Chang Hsieh,, Lue, Hang-Ting, Kuo-Pin Chang,, Yi-Hsuan Hsiao,, Tzu-Hsuan Hsu,, Chih-Ping Chen,, Yin-Jen Chen,, Kuan-Fu Chen,, Chester Lo,, Tzung-Ting Han,, Ming-Shiang Chen,, Wen-Pin LuYear:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703303
File:
PDF, 1.36 MB
english, 2010