Total dose behavior of partially depleted SOI dynamic...

IEEE Transactions on Nuclear Science 2000 / 6 Vol. 47; Iss. 3

Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)

Ferlet-Cavrois, V., Paillet, P., Musseau, O., Leray, J.L., Faynot, O., Raynaud, C., Pelloie, J.L.
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Volume:
47
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.856488
Date:
June, 2000
File:
PDF, 549 KB
english, 2000
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