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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - III–V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization
Yeo, Yee-Chia, Chin, Hock-Chun, Gong, Xiao, Guo, Huaxin, Zhang, XinguiYear:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667643
File:
PDF, 1.38 MB
english, 2010