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The formation of defects in Si under the radiation enhanced diffusion conditions
Kalinin, V. V., Aseyev, A. L., Gerasimenko, N. N., Obodnikov, V. I., Stenin, S. I.Volume:
48
Language:
english
Journal:
Radiation Effects
DOI:
10.1080/00337578008209221
Date:
January, 1980
File:
PDF, 1.07 MB
english, 1980