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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - Highly scalable STT-MRAM with 3-dimensional cell structure using in-plane magnetic anisotropy materials
Lee, Sungchul, Kim, Kwangseok, Kim, Keewon, Pi, Unghwan, Jang, Youngman, Chung, U-in, Yoo, Inkyung, Kim, KinamYear:
2012
Language:
english
DOI:
10.1109/vlsit.2012.6242463
File:
PDF, 806 KB
english, 2012