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Effective attenuation length of Al Kα-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films
R.G. Vitchev, Chr. Defranoux, J. Wolstenholme, T. Conard, H. Bender, J.J. PireauxVolume:
149
Year:
2005
Language:
english
Pages:
8
DOI:
10.1016/j.elspec.2005.06.004
File:
PDF, 310 KB
english, 2005