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[IEEE 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO - London, UK (22-23 Nov. 1999)] 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) - Low-frequency noise characteristics of polysilicon emitter SiGe bipolar transistors made by SEG/NSEG process and given F and/or BF/sub 2/ implants
Lukyanchikova, N., Garbar, N., Petrichuk, M.Year:
1999
Language:
english
DOI:
10.1109/edmo.1999.821474
File:
PDF, 504 KB
english, 1999