Multigate MOSFET in a Bulk Technology by Integrating Polysilicon-Filled Trenches
Ramadout, B., Guo-Neng Lu,, Carrere, J.-P., Pinzelli, L., Perrot, C., Rivoire, M., Nemouchi, F.Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2032791
Date:
December, 2009
File:
PDF, 480 KB
english, 2009