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[IEEE Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Grenoble, France (12-16 Sept. 2005)] Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Germanium/HfO/sub 2//TiN gate stacks for advanced nodes: influence of surface preparation on MOS capacitor characteristics
Le Royer, C., Garros, X., Tabone, C., Clavelier, L., Morand, Y., Hartmann, J.-M., Campidelli, Y., Kermarrec, O., Loup, V., Martinez, E., Renault, O., Guigues, B., Cosnier, V., Deleonibus, S.Year:
2005
Language:
english
DOI:
10.1109/essder.2005.1546594
File:
PDF, 633 KB
english, 2005