The effect of carbon and boron on the accumulation of...

Radiation Effects 1980 / 01 Vol. 52; Iss. 3-4

The effect of carbon and boron on the accumulation of vacancy-oxygen complexes in silicon

Akhmetov, V. D., Bolotov, V. V.
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Volume:
52
Language:
english
Journal:
Radiation Effects
DOI:
10.1080/00337578008210027
Date:
January, 1980
File:
PDF, 283 KB
english, 1980
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