Type-II InP/GaAsSb double-heterojunction bipolar...

Applied Physics Express 2014 / 03 Vol. 7; Iss. 3

Type-II InP/GaAsSb double-heterojunction bipolar transistors with f MAX > 700 GHz

Flückiger, Ralf, Lövblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R.
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Volume:
7
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.7.034105
Date:
March, 2014
File:
PDF, 604 KB
english, 2014
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