[IEEE 2014 IEEE 26th International Symposium on Power...

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[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Ruggedness evaluation of 56mm2, 180 A SiC DMOSFETs as a function of pulse repetition rate for high power applications

Lawson, K., Schrock, J., Ray, W., Bayne, S., Cheng, L., Palmour, J., Allen, S., Scozzie, C.
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Year:
2014
Language:
english
DOI:
10.1109/ispsd.2014.6856036
File:
PDF, 1.10 MB
english, 2014
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