[IEEE 2007 International Semiconductor Device Research...

  • Main
  • [IEEE 2007 International Semiconductor...

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm2/Vs and hole mobility exceeding 3400 cm2/Vs

Yanqing Wu,, Ye, Peide D., Capano, Michael A., Tian Shen,, Yi Xuan,, Yang Sui,, Minghao Qi,, Cooper, James A.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2007
Language:
english
DOI:
10.1109/isdrs.2007.4422514
File:
PDF, 418 KB
english, 2007
Conversion to is in progress
Conversion to is failed