[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Ni silicidation on heavily doped Si substrates
Ahmet, Parhat, Shiozawa, Takashi, Nagahiro, Koji, Nagata, Takahiro, Kakushima, Kuniyuki, Tsutsui, Kazuo, Chikyow, Toyohiro, Iwai, HiroshiYear:
2008
Language:
english
DOI:
10.1109/icsict.2008.4734794
File:
PDF, 1.90 MB
english, 2008