Temperature effects and long term fading of implanted and...

IEEE Transactions on Nuclear Science 2004 / 10 Vol. 51; Iss. 5

Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs

Haran, A., Jaksic, A., Refaeli, N., Eliyahu, A., David, D., Barak, J.
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Volume:
51
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2004.835065
Date:
October, 2004
File:
PDF, 193 KB
english, 2004
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