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[IEEE Seventh International Conference on Indium Phosphide and Related Materials - Hokkaido, Japan (9-13 May 1995)] Seventh International Conference on Indium Phosphide and Related Materials - The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistors
Auer, U., Reuter, R., Ellrodt, P., Heedt, C., Prost, W., Tegude, F.J.Year:
1995
Language:
english
DOI:
10.1109/iciprm.1995.522170
File:
PDF, 379 KB
english, 1995