[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - A 0.23 μm/sup 2/ double self-aligned contact cell for gigabit DRAMs with a Ge-added vertical epitaxial Si pad
Koga, H., Kasai, N., Hada, H., Tatsumi, T., Mori, H., Iwao, S., Saino, K., Yamaguchi, H., Nakajima, K., Yamada, Y., Tokunaga, K., Hirasawa, S., Yoshida, K., Nishizawa, A., Hashimoto, T., Ando, K., KatYear:
1996
Language:
english
DOI:
10.1109/iedm.1996.554052
File:
PDF, 431 KB
english, 1996