Ion-beam induced atomic mixing at the Si02/Si interface...

Ion-beam induced atomic mixing at the Si02/Si interface studied by means of monte carlo simulation

Ferrieu, F.
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Volume:
62
Language:
english
Journal:
Radiation Effects
DOI:
10.1080/00337578208222797
Date:
January, 1982
File:
PDF, 519 KB
english, 1982
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