[IEEE 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2013.06.5-2013.06.6)] 2013 IEEE International Meeting for Future of Electron Devices, Kansai - Leakage current characteristics of new SrBi4Ti4O15/CaBi4Ti4O15 thin-film capacitor with excellent electric stability
Kawahara, Hideaki, Tahara, Naoya, Nomura, Shuhei, Yamashita, Kaoru, Noda, Minoru, Uchida, Hiroshi, Funakubo, HiroshiYear:
2013
Language:
english
DOI:
10.1109/imfedk.2013.6602250
File:
PDF, 405 KB
english, 2013